参数资料
型号: AM29F800B-120FE
厂商: ADVANCED MICRO DEVICES INC
元件分类: PROM
英文描述: 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
中文描述: 512K X 16 FLASH 5V PROM, 120 ns, PDSO48
封装: REVERSE, TSOP-48
文件页数: 20/41页
文件大小: 267K
代理商: AM29F800B-120FE
20
Am29F800T/Am29F800B
8/18/97
P R E L I M I N A R Y
EMBEDDED ALGORITHMS
Note:
1. To insure the command has been accepted, the system software should check the status of DQ3 prior to and following each
subsequent sector erase command. If DQ3 were high on the second status check, the command may not have been ac-
cepted.
Figure 2.
Embedded Erase Algorithm
Start
Erasure Completed
Write Erase Command Sequence
(see below)
Data Polling or Toggle Bit
Successfully Completed
555H/AAH
2AAH/55H
555H/80H
Chip Erase Command Sequence
(Address/Command):
555H/AAH
2AAH/55H
555H/10H
555H/AAH
2AAH/55H
555H/80H
Individual Sector/Multiple Sector
Erase Command Sequence
(Address/Command):
555H/AAH
Sector Address/30H
Sector Address/30H
Sector Address/30H
2AAH/55H
Additional sector
erase commands
are optional
20375C-7
相关PDF资料
PDF描述
AM29F800B-120 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-120EC 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-120ECB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-70FCB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-70FE 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
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