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参数资料
| 型号： | AM29F800B-120FE |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| 中文描述： | 512K X 16 FLASH 5V PROM, 120 ns, PDSO48 |
| 封装： | REVERSE, TSOP-48 |
| 文件页数： | 36/41页 |
| 文件大小： | 267K |
| 代理商： | AM29F800B-120FE |
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36
Am29F800T/Am29F800B
8/18/97
P R E L I M I N A R Y
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. The typical erase and programming times assume the following conditions: 25
°
C, 5.0 volt V
CC
, 100,000 cycles. These
conditions do not apply to erase/program endurance. Programming typicals assume checkerboard pattern.
2. The maximum erase and programming times assume the following conditions: 90
°
C, 4.5 volt V
CC
, 100,000 cycles.
3. Although Embedded Algorithms allow for longer chip program and erase time, the actual time will be considerably less since
bytes program or erase significantly faster than the worst case byte.
4. System-level overhead is defined as the time required to execute the four bus cycle command necessary to program each
byte. In the preprogramming step of the Embedded Erase algorithm, all bytes are programmed to 00H before erasure.
5. The Embedded Algorithms allow for 2.5 ms byte program time. DQ5 = “1” only after a byte takes the theoretical maximum
time to program. A minimal number of bytes may require significantly more programming pulses than the typical byte. The
majority of the bytes will program within one or two pulses. This is demonstrated by the Typical and Maximum Programming
Times listed above.
LATCHUP CHARACTERISTICS
Includes all pins except V
CC
. Test conditions: V
CC
= 5.0 V, one pin at a time.
Parameter
Limits
Unit
Comments
Typ (Note 1)
Max (Note 2)
Sector Erase Time
1.0
8
sec
Excludes 00H programming prior to
erasure
Chip Erase Time (Note 3)
19
152
sec
Byte Programming Time (Note 5)
7
300
μ
s
Excludes system-level overhead (Note 4)
Word Programming Time (Note 5)
14
600
μ
s
Chip Programming Time (Notes 3, 5)
7.2
21.6
sec
Erase/Program Endurance
1,000,000
cycles
Minimum 100,000 cycles guaranteed
Min
Max
Input Voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F800B-120 | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-120EC | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-120ECB | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-70FCB | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-70FE | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F800BB-120DPC1 | 制造商:Spansion 功能描述:5V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F800BB120SC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F800BB-55EC | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 55ns 48-Pin TSOP |
| AM29F800BB-55EF | 功能描述:闪存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F800BB-55EF\\T | 制造商:Spansion 功能描述:IC 8MEG(512K16)BOTTOM SCTOR 100K (CS39S) |
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