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参数资料
型号： AM29F800BT-55SF
厂商： SPANSION LLC
元件分类： PROM
英文描述： Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes
中文描述： 512K X 16 FLASH 5V PROM, 55 ns, PDSO44
封装： LEAD FREE, MO-180AA, SOP-44
文件页数： 38/45页
文件大小： 1382K
代理商： AM29F800BT-55SF
November 17, 2009 21504E8
Am29F800B
41
D A TA SH EE T
REVISION SUMMARY
Revision A (August 1997)
Initial release.
Revision B (October 1997)
Global
Added -55 speed option. Changed data sheet designa-
tion from Advance Information to Preliminary.
Sector Protection/Unprotection
Corrected text to indicate that these functions can only
be implemented using programming equipment.
Table 1, Device Bus Operations
Revised to indicate inputs for both CE# and RESET#
are required for standby mode.
Program Command Sequence
Changed to indicate Data# Polling is active for 2 s
after a program command sequence if the sector spec-
ified is protected.
Sector Erase Command Sequence and DQ3: Sector
Erase Timer
Corrected sector erase timeout to 50 s.
Erase Suspend Command
Changed to indicate that the device suspends the
erase operation a maximum of 20 s after the rising
edge of WE#.
DC Characteristics
Changed to indicate VID min and max values are 11.5
to 12.5 V, with a VCC test condition of 5.0 V. Added
typical values to TTL table. Revised CMOS typical
standby current (ICC3).
Figure 14: Chip/Sector Erase Operation Timings;
Figure 19: Alternate CE# Controlled Write
Operation TImings
Corrected hexadecimal values in address and data
waveforms. In Figure 19, corrected data values for chip
and sector erase.
Erase and Programming Performance
Corrected word and chip programming times.
Revision C (January 1998)
Global
Formatted for consistency with other 5.0 volt-only
data sheets.
Revision C+1 (April 1998)
Distinctive Characteristics
Changed typical program/erase current to 30 mA to
match the CMOS DC Characteristics table.
Changed minimum endurance to 1 million write cycles
per sector guaranteed.
AC Characteristics
Erase/Program Operations: Corrected the notes refer-
ence for tWHWH1 and tWHWH2. These parameters are
100% tested. Changed tDS and tCP specifications for 55
ns device. Changed tWHWH1 word mode specification
to 12 s.
Alternate CE# Controlled Erase/Program Operations:
Corrected the notes reference for tWHWH1 and tWHWH2.
These parameters are 100% tested. Changed tDS and
tCP specifications for 55 ns device. Changed tWHWH1
word mode specification to 12 s.
Temporary Sector Unprotect Table
Added note reference for tVIDR. This parameter is not
100% tested.
Erase and Programming Performance
In Notes 1 and 6, changed the endurance specification
to 1 million cycles.
Revision C+2 (April 1998)
Product Selector Guide
Deleted the -55 speed option for VCC = 5.0 V ± 5%.
Added the -55 speed option for VCC = 5.0 V ± 10%.
Ordering Information
Va lid Combinations fo r Am29F800BT-5 5 and
Am29F800BB-55: Added the extended temperature
range for all package types.
Operating Ranges
VCC Supply Voltages: Deleted “VCC for ± 5% devices .
. . . +4.75 V to +5.25 V”. Changed “VCC for ±10%
devices . . . . +4.5 V to +5.5 V” to “VCC for all devices .
. . . +4.5 V to +5.5 V”.
Erase and Programming Performance
Note 2: Deleted “(4.75 V for -55)”.
相关PDF资料
PDF描述
AM29F800BT-70EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
AM29F800T-120SI FLASH 5V PROM, PDSO44
AM29LV001BB-70ED Flash Memory IC; Memory Size:1Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes
AM29LV002BB-120ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29LV002BT-70EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
相关代理商/技术参数
参数描述
AM29F800BT-55SI 制造商:Spansion 功能描述:FLASH PARALLEL 5V 8MBIT 1MX8/512KX16 55NS 44SOIC - Rail/Tube
AM29F800BT70EC 制造商:AMD 功能描述:NEW
AM29F800BT-70EC 制造商:Advanced Micro Devices 功能描述:
AM29F800BT-70ED 制造商:Spansion 功能描述:IC SM FLASH 5V 8MB
AM29F800BT-70ED 制造商:Spansion 功能描述:FLASH MEMORY IC
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