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参数资料
型号： AM29F800BT-55SF
厂商： SPANSION LLC
元件分类： PROM
英文描述： Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes
中文描述： 512K X 16 FLASH 5V PROM, 55 ns, PDSO44
封装： LEAD FREE, MO-180AA, SOP-44
文件页数： 39/45页
文件大小： 1382K
代理商： AM29F800BT-55SF
42
Am29F800B
21504E8 November 17, 2009
D A TA SH EE T
REVISION SUMMARY (Continued)
Revision D (January 1999)
Distinctive Characteristics
Added the 20-year data retention subbullet.
Ordering Information
Optional Processing: Deleted “B = Burn-in”.
DC Characteristics—TTL/NMOS Compatible
ILIT: Added OE# and RESET to the Description column.
Changed “A9 = 12.5 V” to “A9 = OE# = RESET = 12.5
V” in the Test Conditions column.
I LO, ICC1 , I CC2 : Deleted “V CC = V CC max” in
Test Conditions.
ICC3: Added Note 4, “ICC3 = 20 A max at extended
temperatures (>+85°C)”.
DC Characteristics—CMOS Compatible
ILIT: Added OE# and RESET to the Description column.
Changed “A9 = 12.5 V” to “A9 = OE# = RESET = 12.5
V” in the Test Conditions column.
ICC1, ICC2, ICC3: Deleted “VCC = VCCmax”; added
Note 2 “Maximum ICC specifications are tested with
VCC = VCCmax”.
Revision D+1 (March 23, 1999)
Command Definitions table
Corrected SA definition in legend; range should be
A18–A12. In Note 4, A17 should be A18.
Revision D+2 (July 2, 1999)
Global
Added references to availability of device in Known
Good Die (KGD) form.
Revision E (November 16, 1999)
AC Characteristics—Figure 13. Program
Operations Timing and Figure 14. Chip/Sector
Erase Operations
Deleted tGHWL and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision E+1 (August 4, 2000)
Global
Added FBGA package.
Revision E+2 (June 4, 2004)
Ordering Information
Added Pb-Free OPNs.
Revision E3 (December 22, 2005)
Global
Deleted reverse TSOP package option and 150 ns
speed option.
Revision E4 (May 19, 2006)
Added “Not recommended for new designs” note.
AC Characteristics
Changed tBUSY specification to maximium value.
Revision E5 (November 2, 2006)
Deleted “Not recommended for new designs” note.
Revision E6 (March 3, 2009)
Global
Added obsolescence information.
Revision E7 (August 3, 2009)
Global
Removed obsolescence information.
Revision E8 (November 17, 2009)
Global
Removed 90 ns and 120 ns speed options.
Removed all commercial temperature range options.
相关PDF资料
PDF描述
AM29F800BT-70EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
AM29F800T-120SI FLASH 5V PROM, PDSO44
AM29LV001BB-70ED Flash Memory IC; Memory Size:1Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes
AM29LV002BB-120ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29LV002BT-70EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
相关代理商/技术参数
参数描述
AM29F800BT-55SI 制造商:Spansion 功能描述:FLASH PARALLEL 5V 8MBIT 1MX8/512KX16 55NS 44SOIC - Rail/Tube
AM29F800BT70EC 制造商:AMD 功能描述:NEW
AM29F800BT-70EC 制造商:Advanced Micro Devices 功能描述:
AM29F800BT-70ED 制造商:Spansion 功能描述:IC SM FLASH 5V 8MB
AM29F800BT-70ED 制造商:Spansion 功能描述:FLASH MEMORY IC
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