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参数资料
型号： Am29LV400T-90RWACB
厂商： Advanced Micro Devices, Inc.
英文描述： 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 4兆位（512亩x 8-Bit/256亩x 16位），3.0伏的CMOS只引导扇区闪存
文件页数： 24/40页
文件大小： 516K
代理商： AM29LV400T-90RWACB
Am29LV400
30
PREL I M I N AR Y
AC CHARACTERISTICS
OE#
WE#
CE#
VCC
Data
Addresses
tDS
tAH
tDH
tWP
PD
tWHWH1
tWC
tAS
tWPH
tVCS
555h
PA
Read Status Data (last two cycles)
A0h
tGHWL
tCS
Status
DOUT
Program Command Sequence (last two cycles)
RY/BY#
tRB
tBUSY
tCH
PA
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
20514C-20
Figure 16.
Program Operation Timings
相关PDF资料
PDF描述
Am29LV400T-90RWAE FEEDTHRU CAPACITOR, 470PF 4A 100VFEEDTHRU CAPACITOR, 470PF 4A 100V; Capacitance:0.47nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, +:50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp,
Am29LV400T-90RWAEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV400T-90RWAC Ceramic Multilayer Capacitor; Capacitance:100pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:100V; Dielectric Characteristic:NP0; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes
AM29LV400B-90RWAC 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV640DH90RZE 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
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