参数资料
型号: Am29LV400T-90RWACB
厂商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 4兆位(512亩x 8-Bit/256亩x 16位),3.0伏的CMOS只引导扇区闪存
文件页数: 35/40页
文件大小: 516K
代理商: AM29LV400T-90RWACB
Am29LV400
40
PREL I M I N AR Y
REVISION SUMMARY FOR AM29LV400
Revision C
Added FBGA package. Formatted for consistency with
other current 5.0 volt-only data sheets.
Revision C+1
DC Characteristics
Changed Note 1 to indicate that OE# should be at VIH.
AC Characteristics
Erase/Program Operations; Alternate CE# Controlled
Erase/Program Operations: Corrected the notes refer-
ence for tWHWH1 and tWHWH2. These parameters are
100% tested. Corrected the note reference for tVCS.
This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for tVIDR. This parameter is not
100% tested.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相关PDF资料
PDF描述
Am29LV400T-90RWAE FEEDTHRU CAPACITOR, 470PF 4A 100VFEEDTHRU CAPACITOR, 470PF 4A 100V; Capacitance:0.47nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, +:50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp,
Am29LV400T-90RWAEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV400T-90RWAC Ceramic Multilayer Capacitor; Capacitance:100pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:100V; Dielectric Characteristic:NP0; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes
AM29LV400B-90RWAC 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV640DH90RZE 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
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