参数资料
型号: Am29LV641DH90RZE
厂商: Advanced Micro Devices, Inc.
英文描述: 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
中文描述: 64兆位(4个M x 16位),3.0伏的CMOS只均匀部门闪光控制记忆与VersatileI
文件页数: 36/57页
文件大小: 1467K
代理商: AM29LV641DH90RZE
40
Am29LV640D/Am29LV641D
September 20, 2002
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
Parameter
Speed Options
JEDEC
Std.
Description
90R
101R
120R,
121R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit
polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
50
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
50
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
50
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Word Programming Operation (Note 2)
Typ
11
s
t
WHWH1
t
WHWH1
Accelerated Word Programming Operation (Note 2)
Typ
7
s
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.9
sec
t
VHH
V
HH Rise and Fall Time (Note 1)
Min
250
ns
t
VCS
V
CC Setup Time (Note 1)
Min
50
s
t
RB
Write Recovery Time from RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid to RY/BY# Delay
Min
90
ns
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