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参数资料
| 型号： | AMB0480xxRH |
| 厂商： | Integrated Device Technology, Inc. |
| 英文描述： | ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES |
| 中文描述： | 高级内存缓冲的全缓冲DIMM模块 |
| 文件页数： | 12/15页 |
| 文件大小： | 264K |
| 代理商： | AMB0480XXRH |
12
COMMERCIAL TEMPERATURE RANGE
IDTAMB0480
ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM
Symbol
V
DD
V
IN
(DDR2).
V
OUT
(DDR2)
pin relative to Vss
(2)
I
INK
Input Clamp Current
(V
IN
< 0 or V
IN
> V
DD
)
I
OUTK
Output Clamp Current
(V
OUT
< 0 or V
OUT
> V
DD
)
I
OUT
Continous Output Current
(V
OUT
= 0 to V
DD
)
N/A
Continuous current through
each V
DD
or GND
V
CC
Supply voltage for Core
and High Speed Interface
T
J
Junction Temperature
T
STG
Storage Temperature Range
Description
Mn
-0.5
0.5
Max
+2.3
+2.3
Unit
V
V
Supply voltage DRAMInterface
Voltage on any DDR2 interface
+30
mA
+30
mA
+30
mA
+100
mA
-0.3
+1.75
V
+125
+100
°C
°C
–55
ABSOLUTE MAX IMUM RATINGS
(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximumrating
conditions for extended periods may affect reliability.
2. The input and output negative-voltage ratings may be exceeded if the input and output
clamp-current ratings are observed. This value is limted to 2.3V maximum
ADVANCED MEMORY BUFFER
NORMAL MODE DC ELECTRICAL
PARAMETERS
Parameter
V
CC
link / core
(1,2,3,4)
V
DD
V
DDSPD
Mn
1.425
1.7
3.0
Typ
1.5
1.8
3.3
Max
1.59
1.9
3.6
Unit
V
V
V
NOTES:
1. AMB 1.5V voltage regulation as measured at the package Balls.
2. DC defined as 0 KHz to 30 KHz.
3. DC + AC specified as 1.5V +6%, -5% 30KHz to 1 MHz.
4. There is also a +7%, -5% tolerance allowed for current load steps associated with
initialization/error-recovery state transitions, such as into and out of EI, IBIST, and
MEMBIST. For these transitions, a temporary voltage overshoot is expected and
acceptable as long as it is within +7% (step transition for 20
μ
s
and maximumduty cycle
of 10
-6
%). Transitions between Active and Idle states are not included in this +7%,
-5% tolerance.
ELECTRICAL, POWER, AND THERMAL
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AMB0480XXRH8 | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES |
| AMB0480XXRJ | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES |
| AMB0480XXRJ8 | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES |
| AMB0482C1RJ | 功能描述:缓冲器和线路驱动器 RoHS:否 制造商:Micrel 输入线路数量:1 输出线路数量:2 极性:Non-Inverting 电源电压-最大:+/- 5.5 V 电源电压-最小:+/- 2.37 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Reel |
| AMB0482C1RJ8 | 功能描述:缓冲器和线路驱动器 RoHS:否 制造商:Micrel 输入线路数量:1 输出线路数量:2 极性:Non-Inverting 电源电压-最大:+/- 5.5 V 电源电压-最小:+/- 2.37 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Reel |
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