参数资料
型号: AMB0480xxRH
厂商: Integrated Device Technology, Inc.
英文描述: ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES
中文描述: 高级内存缓冲的全缓冲DIMM模块
文件页数: 14/15页
文件大小: 264K
代理商: AMB0480XXRH
14
COMMERCIAL TEMPERATURE RANGE
IDTAMB0480
ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM
MISCELLANEOUS BIAS
BIAS COMPONENTS - RECOMMENDED VALUES AMB0480
AMB0480
V
DD
V
SS
R
1
HVM
TESTLO_AC20
R
SA0
R
2
R
4
R
3
V
SS
V
SS
TESTLO_AB20
SA0
SA0
SPD
Gold Finger
TESTLO_F8
TESTLO_A13
TESTLO_B13
TESTLO_B17
TESTLO_G16
BFUNC
TEST_F9
TEST_A17
TEST_F21
TEST_F22
NC
NC
NC
NC
NOTES:
1. Refer to JEDEC PC2-4200/5300/6400 DDR2 FULLY BUFFERED DIMMDESIGN SPECIFICATIONS, rev 2.0.
2. Component values for the AMB0480 are summarized in the BIAS COMPONENT table.
Schematic Diagram
Reference
RC
12
Value
82
Ω
Description
The impedance of the pull up (PRU) and pull down (PRD) on the AMB DDR Outputs is relatedto RB
12
& RC
12
as follows:
RC
12
= RB
12
= 5.3125 *Desired Output Impedance
A resistor value of 82
Ω
results in an impedance at a JEDEC nomnal value of 15
Ω
. The user can adjust
these value to optimze the DDR output impedance for a DIMMraw card configuration.
DDR Bias
RB
12
82
Ω
RB
18
RC
18
R
L
C
1
C
2
825
Ω
121
Ω
0
Ω
0
Ω
10
μ
F
10
μ
F
51
Ω
100
Ω
Not loaded
Not loaded
0
Ω
0
Ω
825
Ω
Resistor R must be 0
Ω
Inductor L needs to be replaced with a 0
Ω
resistor
PLL and Channel
RPLLTSTO
R
FBDRES
R
1
R
2
R
3
R
4
RSA0
Mscellaneous
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