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参数资料
| 型号： | AMMC-5024-W10 |
| 元件分类： | 放大器 |
| 英文描述： | 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 0.0925 X 0.0413 INCH, 0.004 INCH HEIGHT, DIE |
| 文件页数： | 10/10页 |
| 文件大小： | 361K |
| 代理商： | AMMC-5024-W10 |
9
Figure 19. AMMC-5024 Schematic.
GND
Drain Bias
(Vdd)
Nine Identical
Vdd AUX
Second Gate
First Gate
Bias (Vg1)
RF_Input
DET_OUT
RF_Output
DET_BIAS
DET_REF
Assembly Techniques
ThebacksideoftheMMICchipisRFground.Formicrostrip
applicationsthechipshouldbeattacheddirectlytothe
groundplane(e.g.circuitcarrierorheatsink)usingelectri-
callyconductiveepoxy[1,2].
Forbestperformance,thetopsideoftheMMICshouldbe
broughtuptothesameheightasthecircuitsurrounding
it.Thiscanbeaccomplishedbymountingagoldplated
metalshim(samelengthastheMMIC)underthechip
whichisofcorrectthicknesstomakethechipandadja-
centcircuitthesameheight.Theamountofepoxyused
forthechiporshimattachmentshouldbejustenoughto
provideathinfilletaroundthebottomperimeterofthe
chip.Thegroundplaneshouldbefreeofanyresiduethat
mayjeopardizeelectricalormechanicalattachment.
RFconnectionsshouldbekeptasshortasreasonableto
minimizeperformancedegradationduetoundesirable
seriesinductance.Asinglebondwireisnormallysuf-
ficientforsingleconnections,howeverdoublebonding
with0.7milgoldwirewillreduceseriesinductance.Gold
thermo-sonicwedgebondingisthepreferredmethod
forwireattachmenttothebondpads.Therecommended
wirebondstagetemperatureis150°c±2°c.
CautionshouldbetakentonotexceedtheAbsoluteMaxi-
mumRatingforassemblytemperatureandtime.
Thechipis100umthickandshouldbehandledwithcare.
ThisMMIChasexposedairbridgesonthetopsurfaceand
shouldbehandledbytheedgesorwithacustomcollet
(donotpickupthediewithavacuumondiecenter).
Bondingpadsandchipbacksidemetallizationaregold.
ThisMMICisalsostaticsensitiveandESDprecautions
shouldbetaken.Eutecticattachisnotrecommendedand
mayjeopardizereliabilityofthedevice.
FormoredetailedinformationseeAvagoTechnologies’
ApplicationNote#5359“GaAsMMICassemblyandhan-
dlingguidelines”.
Notes:
1. Ablebond84-1LMlsilverepoxyisrecommended
2.Eutecticattachisnotrecommendedandmayjeopardizereliability
ofthedevice
相关PDF资料 |
PDF描述 |
|---|---|
| AMMC-5024 | 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AMMC-5024 | 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AMMC-5026 | 2000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AMMC-5026 | 2000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AMMC-5033-W10 | 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AMMC-5024-W50 | 功能描述:射频放大器 Amplifier GaAs MMIC TWA RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMC-5025-W10 | 功能描述:射频放大器 Amplifier GaAs MMIC TWA RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMC-5025-W50 | 功能描述:射频放大器 Amplifier GaAs MMIC TWA RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMC-5026 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:2-35 GHz GaAs MMIC Traveling Wave Amplifier |
| AMMC-5026_08 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:2-35 GHz GaAs MMIC Traveling Wave Amplifier |
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