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参数资料
型号： AMMC-5024-W10
元件分类： 放大器
英文描述： 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装： 0.0925 X 0.0413 INCH, 0.004 INCH HEIGHT, DIE
文件页数： 9/10页
文件大小： 361K
代理商： AMMC-5024-W10
8
Biasing and Operation
AMMC-5024isbiasedwithasinglepositivedrainsupply
(Vdd)anegativegatesupply(Vg1).Forbestoverallperfor-
mancetherecommendedbiasisVdd =7VandIdd=200
mA.Toachievethisdraincurrentlevel,Vg1istypically
between–2.5to–3.5V.Typically,DCcurrentflowforVg1
is–10mA.
TheAMMC-5024hasasecondgatebias(Vg2)thatmaybe
usedforgaincontrol.Whennotbeingutilized,Vg2should
beleftopen-circuited.
Thisfeaturefurtherenhancestheversatilityofapplica-
tions where variable gain over a broad bandwidth is
necessary.
Thissecondgatebias(Vg2)isconnectedtothegatesof
theupperFETsineachcascodestagethroughasmall
de-queingresistor.Theotherendofthegatelineistermi-
natedinanon-chipresistive/diodedividernetwork,which
allowsthesecondgatetoself-bias.Thus,withVg2left
open-circuited,thedraincurrentissetbythe(Vg1)gate
biasvoltageappliedtothelowerFETineachstage.
ThenominalopencircuitvoltageforVg2isapproximately
2volts.Underthisoperatingcondition,maximumgain
andpowerareachievedfromtheTWA.
Byapplyinganexternalvoltagetothesecondgatebias
(Vg2)lessthantheopen-circuitpotential,thedrainvolt-
ageonthelowerFETcanbedecreasedtoapointwhere
thelowerFETentersthelinearoperatingregion.This
reducesthecurrentdrawnbyeachstage.DecreasingVg2
furtherwillreducethedrainvoltageonthelowerFETto-
wardszerowhilepinchingofftheupperFETineachstage.
AtlargernegativevaluesofVg2(between0and-2.5volts)
thegainoftheTWAwilldecreasesignificantly.
Usingthesimplestformofassembly(Figure20),thedevice
iscapableofdeliveringflatgainovera2–50GHzrange
withaminimumofgainslopeandripple.However,this
deviceisdesignedwithDCcoupledRFI/Oports,and
operationmaybeextendedtolowerfrequencies(<2
GHz)throughtheuseofoff-chiplow-frequencyextension
circuitryandproperexternalbiasingcomponents.With
lowfrequencybiasextensionitmaybeusedinavariety
oftime-domainapplications(through40Gb/s).
Figure21showsatypicalassemblyconfiguration.
WhenbypasscapacitorsareconnectedtotheAUXpads,
thelowfrequencylimitisextendeddowntothecorner
frequencydeterminedbythebypasscapacitorandthe
combinationoftheon-chip50ohmloadandsmallde-
queingresistor.Atthisfrequencythesmallsignalgain
willincreaseinmagnitudeandstayatthiselevatedlevel
downtothepointwheretheCauxbypasscapacitoractsas
anopencircuit,effectivelyrollingoffthegaincompletely.
Thelowfrequencylimitcanbeapproximatedfromthe
followingequation:
fCaux =
1
2
πCaux(Ro + RDEQ)
where:
Roisthe50gateordrainlineterminationresistor.
RDEQisthesmallseriesde-queingresistorand10.
Cauxisthecapacitanceofthebypasscapacitorcon-
nectedtotheAUXDrainpadinfarads.
WiththeexternalbypasscapacitorsconnectedtotheAUX
gateandAUXdrainpads,gainwillshowaslightincrease
between1.0and1.5GHz.Thisisduetoaseriescombina-
tionofCauxandtheonchipresistancebutisexaggerated
bytheparasiticinductance(Lc)ofthebypasscapacitorand
theinductanceofthebondwire(Ld).Thereforethebond
wirefromtheAuxpadstothebypasscapacitorsshould
bemadeasshortaspossible.
InputandoutputRFportsareDCcoupled;therefore,DC
decouplingcapacitorsarerequiredifthereareDCpaths.
(Donotattempttoapplybiastothesepads.)
RFbondconnectionsshouldbekeptasshortaspossible
toreduceRFleadinductancewhichwilldegradeperfor-
manceabove20GHz.
Anoptionaloutputpowerdetectornetworkisalsopro-
vided.A>0.5FcapacitorisrequiredfortheDet_Out
padtoexpandpowerdetectionperformancebelow100
MHz.
Groundconnectionsaremadewithplatedthrough-holes
tothebacksideofthedevice;therefore,groundwiresare
notneeded.
相关PDF资料
PDF描述
AMMC-5024 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AMMC-5024 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AMMC-5026 2000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMC-5026 2000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMC-5033-W10 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
相关代理商/技术参数
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