参数资料
| 型号： | AMP02FSZ |
| 厂商： | Analog Devices Inc |
| 文件页数： | 5/12页 |
| 文件大小： | 0K |
| 描述： | IC AMP INST PREC LDRIFT 16SOIC |
| 标准包装： | 47 |
| 放大器类型： | 仪表 |
| 电路数： | 1 |
| 转换速率： | 6 V/µs |
| -3db带宽： | 1.2MHz |
| 电流 - 输入偏压： | 4nA |
| 电压 - 输入偏移： | 40µV |
| 电流 - 电源： | 5mA |
| 电流 - 输出 / 通道： | 32mA |
| 电压 - 电源，单路/双路(±)： | ±4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC W |
| 包装： | 管件 |
| 产品目录页面： | 771 (CN2011-ZH PDF) |
REV. E
–2–
AMP02–SPECIFICATIONS
AMP02E
AMP02F
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Max
Unit
OFFSET VOLTAGE
Input Offset Voltage
VIOS
TA = 25
°C20
100
40
200
V
–40
°C ≤ TA ≤ +85°C50
200
100
350
V
Input Offset Voltage Drift
TCVIOS
–40
°C ≤ TA ≤ +85°C
0.5
2
1
4
V/°C
Output Offset Voltage
VOOS
TA = 25
°C1
4
2
8
mV
–40
°C ≤ TA ≤ +85°C4
10
9
20
mV
Output Offset Voltage Drift
TCVOOS
–40
°C ≤ TA ≤ +85°C50
100
200
V/°C
Power Supply Rejection
PSR
VS =
±4.8 V to ±18 V
G = 100, 1000
115
125
110
115
dB
G = 10
100
110
95
100
dB
G = 1
80
90
75
80
dB
VS =
±4.8 V to ±18 V
–40
°C ≤ TA ≤ +85°C
G = 1000, 100
110
120
105
110
dB
G = 10
95
110
90
95
dB
G = 1
75
90
70
75
dB
INPUT CURRENT
Input Bias Current
IB
TA = 25
°C2
10
4
20
nA
Input Bias Current Drift
TCIB
–40
°C ≤ TA ≤ +85°C
150
250
pA/
°C
Input Offset Current
IOS
TA = 25
°C
1.2
5
2
10
nA
Input Offset Current Drift
TCIOS
–40
°C ≤ T
A
≤ +85°C9
15
pA/
°C
INPUT
Input Resistance
RIN
Differential, G
≤ 1000
10
G
Common Mode, G = 1000
16.5
G
Input Voltage Range
IVR
TA = 25
°C1
±11
V
Common-Mode Rejection
CMR
VCM =
±11 V
G = 1000, 100
115
120
110
115
dB
G = 10
100
115
95
110
dB
G = 1
80
95
75
90
dB
VCM =
±11 V
–40
°C ≤ TA ≤ +85°C
G = 100, 1000
110
120
105
115
dB
G = 10
95
110
90
105
dB
G = 1
75
90
70
85
dB
GAIN
Gain Equation
G = 1000
0.50
0.70
%
Accuracy
G =
50 k
+1
G = 100
0.30
0.50
%
RG
G = 10
0.25
0.40
%
G = 1
0.02
0.05
%
Gain Range
G
1
10k
1
10k
V/V
Nonlinearity
G = 1 to 1000
0.006
%
Temperature Coefficient
GTC
1
≤ G ≤ 10002, 3
20
50
20
50
ppm/
°C
OUTPUT RATING
Output Voltage Swing
VOUT
TA = 25
°C, RL = 1 k±12
±13
±12
±13
V
RL = 1 k
, –40°C ≤ T
A
≤ +85°C
±11
±12
±11
±12
V
Positive Current Limit
Output-to-Ground Short
22
mA
Negative Current Limit
Output-to-Ground Short
32
mA
NOISE
Voltage Density, RTI
en
fO = 1 kHz
G = 1000
9
nV/
√Hz
G = 100
10
nV/
√Hz
G = 10
18
nV/
√Hz
G = 1
120
nV/
√Hz
Noise Current Density, RTI in
fO = 1 kHz, G = 1000
0.4
pA/
√Hz
Input Noise Voltage
en p-p
0.1 Hz to 10 Hz
G = 1000
0.4
V p-p
G = 100
0.5
V p-p
G = 10
1.2
V p-p
DYNAMIC RESPONSE
Small-Signal Bandwidth
BW
G = 1
1200
kHz
(–3 dB)
G = 10
300
kHz
G = 100, 1000
200
kHz
Slew Rate
SR
G = 10, RL = 1 k
46
4
6
V/
s
Settling Time
tS
To 0.01%
±10 V Step
G = 1 to 1000
10
s
SENSE INPUT
Input Resistance
RIN
25
k
Voltage Range
±11
V
REFERENCE INPUT
Input Resistance
RIN
50
k
Voltage Range
±11
V
Gain to Output
11
V/V
ELECTRICAL CHARACTERISTICS (@ V
S =
15 V, VCM = 0 V, TA = 25 C, unless otherwise noted.)
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