参数资料
型号: AMP02FSZ
厂商: Analog Devices Inc
文件页数: 7/12页
文件大小: 0K
描述: IC AMP INST PREC LDRIFT 16SOIC
标准包装: 47
放大器类型: 仪表
电路数: 1
转换速率: 6 V/µs
-3db带宽: 1.2MHz
电流 - 输入偏压: 4nA
电压 - 输入偏移: 40µV
电流 - 电源: 5mA
电流 - 输出 / 通道: 32mA
电压 - 电源,单路/双路(±): ±4.5 V ~ 18 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.295",7.50mm 宽)
供应商设备封装: 16-SOIC W
包装: 管件
产品目录页面: 771 (CN2011-ZH PDF)
REV. E
–4–
AMP02
1. RG1
2. –IN
3. +IN
4. V–
5. REFERENCE
6. OUT
7. V+
8. RG2
9. SENSE
CONNECT SUBSTRATE TO V–
8
1
DIE SIZE 0.103 inch
0.116 inch, 11,948 sq. mils
(2.62 mm
2.95 mm, 7.73 sq. mm)
NOTE: PINS 1 and 8 are KELVIN CONNECTED
Die Characteristics
WAFER TEST LIMITS* (@ V
S =
15 V, VCM = 0 V, TA = 25 C, unless otherwise noted.)
AMP02 GBC
Parameter
Symbol
Conditions
Limits
Unit
Input Offset Voltage
VIOS
200
V max
Output Offset Voltage
VOOS
8
mV max
VS =
±4.8 V to ±18 V
G = 1000
110
Power Supply
PSR
G = 100
110
dB
Rejection
G = 10
95
G = 1
75
Input Bias Current
IB
20
nA max
Input Offset Current
IOS
10
nA max
Input Voltage Range
IVR
Guaranteed by CMR Tests
±11
V min
VCM =
±11 V
G = 1000
110
Common-Mode
CMR
G = 100
110
dB
Rejection
G = 10
95
G = 1
75
Gain Equation Accuracy
G
=
50 k
R G
+1, G =1000
0.7
% max
Output Voltage Swing
VOUT
RL = 1 k
±12
V min
Supply Current
ISY
6
mA max
*Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not
guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AMP02 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
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