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参数资料
| 型号： | AO3413 |
| 厂商： | ALPHA |
| 元件分类： | 圆形连接器 |
| 英文描述： | Circular Connector; No. of Contacts:12; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| 中文描述： | 的P -沟道增强型场效应晶体管 |
| 文件页数： | 1/6页 |
| 文件大小： | 222K |
| 代理商： | AO3413 |
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
70
100
63
Max
90
125
80
R
θ
JL
W
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
Steady-State
R
θ
JA
±8
-3
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Drain-Source Voltage
-20
Maximum
Units
V
V
Parameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
-2.4
-15
1.4
0.9
Power Dissipation
A
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
A
P
D
°C
-55 to 150
I
D
AO3413
P-Channel Enhancement Mode Field Effect Transistor
June 2003
Features
V
DS
(V) = -20V
I
D
= -3 A
R
DS(ON)
< 97m
(V
GS
= -4.5V)
R
DS(ON)
< 130m
(V
GS
= -2.5V)
R
DS(ON)
< 190m
(V
GS
= -1.8V)
General Description
The AO3413 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
S
G
D
TO-236
(SOT-23)
Top View
G
D
S
Alpha & Omega Semiconductor, Ltd.
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PDF描述 |
|---|---|
| AO3414 | N-Channel Enhancement Mode Field Effect Transistor |
| AO3414L | N-Channel Enhancement Mode Field Effect Transistor |
| AO3420 | N-Channel Enhancement Mode Field Effect Transistor |
| AO3420L | N-Channel Enhancement Mode Field Effect Transistor |
| AO3421 | P-Channel Enhancement Mode Field Effect Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AO3413_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:20V P-Channel MOSFET |
| AO3413L | 制造商:AOS 功能描述:MOSFET |
| AO3414 | 功能描述:MOSFET N-CH 20V 4.2A SOT23 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO3414_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:20V N-Channel MOSFET |
| AO3414L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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