- 您现在的位置：买卖IC网 > PDF目录375330 > AO3413 (ALPHA) Circular Connector; No. of Contacts:12; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No PDF资料下载
参数资料
| 型号： | AO3413 |
| 厂商： | ALPHA |
| 元件分类： | 圆形连接器 |
| 英文描述： | Circular Connector; No. of Contacts:12; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| 中文描述： | 的P -沟道增强型场效应晶体管 |
| 文件页数： | 4/6页 |
| 文件大小： | 222K |
| 代理商： | AO3413 |
AO3413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
2
4
6
8
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-
G
0
200
400
600
800
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
C
iss
C
oss
C
rss
0
0.001
5
10
15
20
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
0.01
0.00001
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
θ
J
T
T
on
T
P
D
D=T
on
/(T
on
+T
off
)
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-
D
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
μ
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
10
μ
s
T
J(Max)
=150°C
T
A
=25°C
V
DS
=-10V
I
D
=-3A
Single Pulse
T
J(Max)
=150°C
T
A
=25°C
Alpha & Omega Semiconductor, Ltd.
相关PDF资料 |
PDF描述 |
|---|---|
| AO3414 | N-Channel Enhancement Mode Field Effect Transistor |
| AO3414L | N-Channel Enhancement Mode Field Effect Transistor |
| AO3420 | N-Channel Enhancement Mode Field Effect Transistor |
| AO3420L | N-Channel Enhancement Mode Field Effect Transistor |
| AO3421 | P-Channel Enhancement Mode Field Effect Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AO3413_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:20V P-Channel MOSFET |
| AO3413L | 制造商:AOS 功能描述:MOSFET |
| AO3414 | 功能描述:MOSFET N-CH 20V 4.2A SOT23 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO3414_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:20V N-Channel MOSFET |
| AO3414L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
发布紧急采购，3分钟左右您将得到回复。