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参数资料
| 型号： | AO3423 |
| 厂商： | ALPHA |
| 元件分类： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -沟道增强型场效应晶体管 |
| 文件页数： | 2/4页 |
| 文件大小： | 134K |
| 代理商： | AO3423 |
AO3423
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-20
V
-0.5
-2.5
±1
±10
-1.4
T
J
=55°C
μ
A
μ
A
V
GS(th)
I
D(ON)
-0.7
-8
-0.9
V
A
76
90
94
128
6.8
-0.78
92
108
118
166
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
-1
-1.8
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
512
77
62
9.2
620
pF
pF
pF
13
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
5.5
0.8
1.9
5
6.7
28
13.5
9.8
2.7
6.6
nC
nC
nC
ns
ns
ns
ns
12
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate-Body leakage current
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
I
F
=-2A, dI/dt=100A/
μ
s
I
F
=-2A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=-10V, f=1MHz
V
GS
=-4.5V, V
DS
=-10V, I
D
=-2A
V
GS
=-10V, V
DS
=-10V, R
L
=5
,
R
GEN
=3
m
V
GS
=-4.5V, I
D
=-2A
V
GS
=-2.5V, I
D
=-1A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-2A
I
DSS
μΑ
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-2A
V
DS
=-16V, V
GS
=0V
V
DS
=0V, V
GS
=±12V
Zero Gate Voltage Drain Current
V
DS
=0V, V
GS
=±10V
I
GSS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
D
=-250
μ
A, V
GS
=0V
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
provides a single pulse rating.
F. The maximum current rating is limited by bond-wires.
Rev 0 : Mar 2006
Alpha & Omega Semiconductor, Ltd.
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相关代理商/技术参数 |
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| AO3424_102 | 功能描述:MOSFET N-CH 30V SOT23 制造商:alpha & omega semiconductor inc. 系列:- 包装:带卷（TR） 零件状态:最後搶購 安装类型:表面贴装 供应商器件封装:SOT-23-3 封装/外壳:TO-236-3，SC-59，SOT-23-3 标准包装:3,000 |
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