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参数资料
| 型号： | AO4411 |
| 厂商： | ALPHA |
| 元件分类： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -沟道增强型场效应晶体管 |
| 文件页数： | 2/4页 |
| 文件大小： | 118K |
| 代理商： | AO4411 |
AO4411
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-30
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-2.4
nA
V
A
-1.2
-40
-2
24.5
33
41
14.5
-0.76
32
T
J
=125°C
55
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
-1
-4.2
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge (10V)
920
190
122
3.6
1120
pF
pF
pF
5
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
18.4
9.3
2.7
4.9
7.1
3.4
18.9
8.4
21.5
12.5
23
11.5
nC
nC
nC
nC
ns
ns
ns
ns
27
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-8A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-8A
Reverse Transfer Capacitance
Gate resistance
I
F
=-8A, dI/dt=100A/
μ
s
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
μ
A
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
m
V
GS
=-4.5V, I
D
=-5A
V
DS
=-5V, I
D
=-8A
I
S
=-1A,V
GS
=0V
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-15V, R
L
=1.8
,
R
GEN
=3
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Input Capacitance
Output Capacitance
Turn-On DelayTime
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=-10V, V
DS
=-15V, I
D
=-8A
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev 4: Sept 2005
≤
10s thermal resistance rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
Alpha & Omega Semiconductor, Ltd.
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