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参数资料
| 型号： | AO4427 |
| 厂商： | ALPHA |
| 元件分类： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -沟道增强型场效应晶体管 |
| 文件页数： | 4/4页 |
| 文件大小： | 146K |
| 代理商： | AO4427 |
AO4427
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V
GS
=-10V, V
DS
=-15V, I
D
=-12.5A
10ms
THIS PR1
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNC0.1
0
2
4
6
8
10
0
5
10
15
20
-Q
g
(nC)
25
30
35
40
45
Figure 7: Gate-Charge Characteristics
-
G
0
500
1000
1500
2000
2500
3000
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
C
iss
0
0.001
10
20
30
40
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
0.01
0.00001
10
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
θ
J
T
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
(Volts)
-
D
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
μ
s
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
V
DS
=-15V
I
D
=-12.5A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=40°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
10
μ
s
Alpha & Omega Semiconductor, Ltd.
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相关代理商/技术参数 |
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|---|---|
| AO4427_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4427L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| AO4429 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| AO4429L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| AO4430 | 功能描述:MOSFET N-CH 30V 18A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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