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参数资料
| 型号： | AO4496 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN, SOIC-8 |
| 文件页数： | 2/5页 |
| 文件大小： | 198K |
| 代理商： | AO4496 |
AO4496
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
TJ = 55°C
5
IGSS
±100
nA
VGS(th)
1.4
1.8
2.5
V
ID(ON)
50
A
16
19.5
TJ=125°C
24
29
21
26
gFS
30
S
VSD
0.76
1
V
IS
3
A
Ciss
550
715
pF
Coss
110
pF
Crss
55
pF
Rg
3
4
4.9
Qg (10V)
9.8
13
nC
Qg (4.5V)
4.6
6.1
nC
Qgs
1.8
nC
Qgd
2.2
nC
tD(on)
5
ns
tr
3.2
ns
tD(off)
24
ns
tf
6
ns
trr
22
29
ns
Qrr
14
nC
0
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
On state drain current
ID = 250A, VGS = 0V
VGS = 10V, VDS = 5V
VDS = 30V, VGS = 0V
VDS = 0V, VGS = ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/s
VGS = 10V, ID = 10A
Reverse Transfer Capacitance
IF=10A, dI/dt=100A/s
Static Drain-Source On-Resistance
Diode Forward Voltage
VGS = 4.5V, ID = 7.5A
m
Gate Threshold Voltage
VDS = VGS ID = 250A
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
RDS(ON)
Drain-Source Breakdown Voltage
Turn-Off DelayTime
VGS=10V, VDS=15V, RL= 1.5,
RGEN=3
Turn-Off Fall Time
Turn-On DelayTime
Turn-On Rise Time
Gate Source Charge
Gate Drain Charge
A
Total Gate Charge
VGS=10V, VDS=15V, ID=10A
Output Capacitance
IS = 1A,VGS = 0V
VDS = 5V, ID = 10A
Forward Transconductance
Gate resistance
SWITCHING PARAMETERS
DYNAMIC PARAMETERS
Maximum Body-Diode Continuous Current
Total Gate Charge
VGS=0V, VDS=0V, f=1MHz
VGS=0V, VDS=15V, f=1MHz
Input Capacitance
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A = 25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev5: Nov. 2010
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4496_101 | 功能描述:MOSFET N-CH 30V 10A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包装:带卷（TR） 零件状态:过期 FET 类型:MOSFET N 通道，金属氧化物 FET 功能:标准 漏源极电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:10A（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:19.5 毫欧 @ 10A，10V 不同 Id 时的 Vgs（th）（最大值）:2.5V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:13nC @ 10V 不同 Vds 时的输入电容（Ciss）:715pF @ 15V 功率 - 最大值:3.1W 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商器件封装:8-SO 标准包装:1 |
| AO4496_12 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AO4498 | 功能描述:MOSFET N CH 30V 18A SOIC 8 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO4498E | 功能描述:MOSFET N-CH 30V 18A 8SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO4498EL | 功能描述:MOSFET N-CH 8-SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包装:带卷（TR） 零件状态:停產 FET 类型:N 沟道 技术:MOSFET（金属氧化物） 漏源电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:18A（Ta） 驱动电压（最大 Rds On，最小 Rds On）:4.5V，10V 不同 Id 时的 Vgs（th）（最大值）:2.3V @ 250μA 不同 Vgs 时的栅极电荷?（Qg）（最大值）:50nC @ 10V Vgs（最大值）:±20V 不同 Vds 时的输入电容（Ciss）（最大值）:2760pF @ 15V FET 功能:- 功率耗散（最大值）:3.1W（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:5.8 毫欧 @ 18A，10V 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 供应商器件封装:8-SOIC 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 标准包装:3,000 |
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