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参数资料
| 型号： | AO4600 |
| 厂商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增强模式互补场效应晶体管 |
| 文件页数： | 3/7页 |
| 文件大小： | 274K |
| 代理商： | AO4600 |
AO4600
TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
V
GS
=2V
2.5V
3V
4.5V
10V
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(
10
20
30
40
50
60
0
5
10
15
20
I
D
(Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.00
0.25
0.50
0.75
1.00
1.25
1.50
V
SD
(Volts)
Figure 6: Body diode characteristics
I
S
125°C
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
0
50
100
150
200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction
Temperature
N
V
GS
=2.5V
V
GS
=10V
V
GS
=4.5V
10
20
30
40
50
60
70
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
)
25°C
125°C
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
I
D
=5A
125°C
25°C
25°C
I
D
=5A
Alpha & Omega Semiconductor, Ltd.
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