参数资料
型号: AO4604
厂商: ALPHA
英文描述: Complementary Enhancement Mode Field Effect Transistor
中文描述: 增强模式互补场效应晶体管
文件页数: 1/9页
文件大小: 825K
代理商: AO4604
Symbol
V
DS
V
GS
Max p-channel
-30
±20
Units
V
V
I
DM
T
J
, T
STG
°C
Symbol
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
48
74
35
Max
62.5
110
40
62.5
110
40
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
R
θ
JL
R
θ
JL
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
-55 to 150
-55 to 150
Maximum Junction-to-Lead
C
Maximum Junction-to-Ambient
A
Steady-State
t
10s
t
10s
Steady-State
R
θ
JA
30
±20
6.9
5.8
30
2
1.44
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
W
-4.2
-20
-5
2
1.44
A
T
A
=25°C
T
A
=70°C
I
D
R
θ
JA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
T
A
=70°C
Power Dissipation
Junction and Storage Temperature Range
T
A
=25°C
P
D
AO4604
Complementary Enhancement Mode Field Effect Transistor
Nov 2002
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 6.9A -5A
R
DS(ON)
R
DS(ON)
< 28m
(V
GS
=10V) < 52m
(V
GS
= 10V)
< 42m
(V
GS
=4.5V) < 87m
(V
GS
= 4.5V)
General Description
The AO4604 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used
in power inverters, and other applications.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G2
D2
S2
G1
D1
S1
n-channel
p-channel
Alpha & Omega Semiconductor, Ltd.
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AO4606_101 制造商:Alpha & Omega Semiconductor 功能描述:
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