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参数资料
| 型号： | AO4604 |
| 厂商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增强模式互补场效应晶体管 |
| 文件页数： | 3/9页 |
| 文件大小： | 825K |
| 代理商： | AO4604 |
AO
4604
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-30
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-3
nA
V
A
-1
-
1
0
-1.8
39
54
67
8.6
-0.77
52
70
87
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
6
S
V
A
-1
-2.8
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge (10V)
700
120
75
10
pF
pF
pF
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
14.7
7.6
2
3.8
8.3
5
29
14
23.5
13.4
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Maximum Body-Diode Continuous Current
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=-15V, f=1MHz
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-15V, R
L
=3
,
R
GEN
=3
Turn-On DelayTime
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-5A
m
V
GS
=-4.5V, I
D
=-4A
V
DS
=-5V, I
D
=-5A
I
S
=-1A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
μ
A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=5.0A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
: P-CHANNEL
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-5A, dI/dt=100A/
μ
s
I
D
=-250
μ
A, V
GS
=0V
I
F
=-5A, dI/dt=100A/
μ
s
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
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相关代理商/技术参数 |
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|---|---|
| AO4604_09 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4606 | 制造商:AOS 功能描述:MOSFET |
| AO4606_101 | 制造商:Alpha & Omega Semiconductor 功能描述: |
| AO4606_12 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V Complementary MOSFET |
| AO4606L | 功能描述:MOSFET N-CH 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包装:带卷（TR） 零件状态:过期 FET 类型:N 和 P 沟道互补型 FET 功能:标准 漏源极电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:6A 不同?Id，Vgs 时的?Rds On（最大值）:30 毫欧 @ 6A，10V 不同 Id 时的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:6nC @ 10V 不同 Vds 时的输入电容（Ciss）:310pF @ 15V 功率 - 最大值:2W 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商器件封装:8-SOIC 标准包装:3,000 |
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