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参数资料
| 型号： | AO4600L |
| 厂商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增强模式互补场效应晶体管 |
| 文件页数： | 1/7页 |
| 文件大小： | 274K |
| 代理商： | AO4600L |
Symbol
V
DS
V
GS
Max p-channel
-30
±12
Units
V
V
I
DM
T
J
, T
STG
°C
Symbol
Typ
48
74
35
Max
62.5
110
40
R
θ
JL
-30
2
1.44
±12
6.9
5.8
40
2
1.44
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
A
T
A
=25°C
T
A
=70°C
I
D
W
-4.2
-5
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Max n-channel
30
T
A
=70°C
Power Dissipation
Junction and Storage Temperature Range
T
A
=25°C
P
D
Steady-State
Steady-State
°C/W
°C/W
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
-55 to 150
-55 to 150
Maximum Junction-to-Lead
C
Units
°C/W
t
≤
10s
R
θ
JA
AO4600
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 6.9A
(V
GS
= 10V)
-5A
(V
GS
=
-
10V)
R
DS(ON)
< 27m
< 49m
(V
GS
=
-
10V)
< 32m
< 64m
(V
GS
=
-
4.5V)
< 50m
< 120m
(V
GS
=
-
2.5V)
General Description
The AO4600 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AO4600 is Pb-free (meets ROHS
& Sony 259 specifications). AO4600L is a Green
Product ordering option. AO4600 and AO4600L are
electrically identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G2
D2
S2
G1
D1
S1
n-channel
p-channel
Alpha & Omega Semiconductor, Ltd.
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