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参数资料
| 型号： | AO4600L |
| 厂商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增强模式互补场效应晶体管 |
| 文件页数： | 6/7页 |
| 文件大小： | 274K |
| 代理商： | AO4600L |
AO4600
TYPICAL P-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-
D
V
GS
=-2V
-2.5V
-3V
-4.5V
-10V
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-
D
(
20
40
60
80
100
120
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
D
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-
S
25°C
125°C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
N
V
GS
=-2.5V
I
D
=-2A
V
GS
=-10V
V
GS
=-4.5V
10
30
50
70
90
110
130
150
170
190
0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
)
25°C
125°C
V
DS
=-5V
V
GS
=-2.5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-2A
25°C
125°C
I
D
=-5A
Alpha and Omega Semiconductor, Ltd.
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