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参数资料
| 型号： | AO4607 |
| 厂商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增强模式互补场效应晶体管 |
| 文件页数： | 5/8页 |
| 文件大小： | 203K |
| 代理商： | AO4607 |
AO4607
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNE
L
0
2
4
6
8
10
0
2
4
6
8
10
12
14
Q
g
(nC)
Figure 7: Gate-Charge characteristics
V
G
0
100
200
300
400
500
600
700
800
900
1000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics: MOSFET +
Parallel Schottky
C
C
iss
0
0.001
10
20
30
40
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
0.01
0.00001
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
θ
J
T
C
oss
(FET + Schottky)
C
rss
0.1
1
10
100
0.1
1
10
100
V
DS
(Volts)
I
D
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
μ
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
V
DS
=15V
I
D
=6.9A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=62.5°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
f=1MHz
V
GS
=0V
10
μ
s
Alpha & Omega Semiconductor, Ltd.
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相关代理商/技术参数 |
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| AO4607L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
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| AO4609L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4610 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4610L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
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