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参数资料
| 型号： | AO4615 |
| 厂商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增强模式互补场效应晶体管 |
| 文件页数： | 1/7页 |
| 文件大小： | 198K |
| 代理商： | AO4615 |
Symbol
V
DS
V
GS
Max p-channel
-30
±20
Units
V
V
I
DM
I
AR
E
AR
T
J
, T
STG
A
mJ
°C
Symbol
Typ
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
55
92
37
48
87
37
62.5
110
50
62.5
110
50
R
θ
JL
R
θ
JL
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t
≤
10s
Steady-State
R
θ
JA
-30
2
1.44
20
20
T
A
=70°C
Power Dissipation
Avalanche Current
B
Repetitive avalanche energy 0.1mH
B
T
A
=25°C
P
D
Steady-State
Steady-State
Junction and Storage Temperature Range
A
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
T
A
=70°C
I
D
W
7.2
6.1
30
2
1.44
15
11
-4.9
-5.7
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Max n-channel
30
±20
R
θ
JA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Max
Parameter
Maximum Junction-to-Ambient
A
t
≤
10s
Thermal Characteristics: n-channel and p-channel
-55 to 150
-55 to 150
AO4615
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 7.2A (V
GS
=10V) -5.7A (V
GS
=10V)
R
DS(ON)
R
DS(ON)
< 24m
(V
GS
=10V) < 39m
(V
GS
= -10V)
< 40m
(V
GS
=4.5V) < 62m
(V
GS
= -4.5V)
ESD rating: 1500V (HBM)
P-channel MOSFET has an additional R
OC
< 1M
for
open circuit protection.
General Description
The AO4615 uses advanced trench
technology MOSFETs to provide
excellent R
DS(ON)
and low gate charge.
The complementary MOSFETs may be
used to form a level shifted high side
switch, and for a host of other
applications. It is ESD protected.
Standard product AO4615 is Pb-free
(meets ROHS & Sony 259
specifications). AO4615L is a Green
Product ordering option. AO46
15
and
AO4615L are electrically identical
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
n-channel
p-channel
G2
D2
S2
G1
D1
S1
R
OC
Alpha & Omega Semiconductor, Ltd.
相关PDF资料 |
PDF描述 |
|---|---|
| AO4615L | Complementary Enhancement Mode Field Effect Transistor |
| AO4616 | Complementary Enhancement Mode Field Effect Transistor |
| AO4616L | Complementary Enhancement Mode Field Effect Transistor |
| AO4617 | Complementary Enhancement Mode Field Effect Transistor |
| AO4619 | Diode; Antenna switching; VR (V): 60; IF (mA): 50; Pd (mW): 150; rf (ohm) max: 1.8; Condition IF at rf (mA): 10; Condition f at rf (MHz): 100; VF (V) max: 0.9; Condition IF at VF (mA): 2; C (pF) max: 0.45; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: SFP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4615L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4616 | 功能描述:MOSFET N/P-CH COMPL 30V 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| AO4616_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V Complementary MOSFET |
| AO4616L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4616L_102 | 功能描述:MOSFET N/P-CH 30V 8A/7A 8-SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包装:带卷（TR） 零件状态:过期 FET 类型:N 和 P 沟道 FET 功能:逻辑电平门 漏源极电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:8A，7A 不同?Id，Vgs 时的?Rds On（最大值）:20 毫欧 @ 8A，10V 不同 Id 时的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:18nC @ 10V 不同 Vds 时的输入电容（Ciss）:888pF @ 15V 功率 - 最大值:2W 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商器件封装:8-SO 标准包装:1 |
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