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参数资料
| 型号： | AO4619 |
| 厂商： | ALPHA |
| 英文描述： | Diode; Antenna switching; VR (V): 60; IF (mA): 50; Pd (mW): 150; rf (ohm) max: 1.8; Condition IF at rf (mA): 10; Condition f at rf (MHz): 100; VF (V) max: 0.9; Condition IF at VF (mA): 2; C (pF) max: 0.45; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: SFP |
| 中文描述： | 增强模式互补场效应晶体管 |
| 文件页数： | 1/7页 |
| 文件大小： | 155K |
| 代理商： | AO4619 |
Symbol
V
DS
V
GS
Max p-channel
-30
±20
Units
V
V
I
DM
I
AR
E
AR
T
J
, T
STG
A
mJ
°C
Symbol
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
50
82
41
50
82
41
Max
62.5
110
50
62.5
110
50
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
R
θ
JL
R
θ
JL
11
18
25
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Avalanche Current
B
Repetitive avalanche energy 0.3mH
B
13
T
A
=70°C
Power Dissipation
A
T
A
=25°C
P
D
A
Continuous Drain
Current
F
Pulsed Drain Current
B
T
A
=25°C
T
A
=70°C
I
D
-25
2
1.3
W
7.4
6
35
2
1.3
-4.2
-5.2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Max n-channel
30
±20
t
≤
10s
Steady-State
Steady-State
R
θ
JA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Maximum Junction-to-Lead
C
Maximum Junction-to-Ambient
A
Steady-State
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t
≤
10s
Steady-State
R
θ
JA
AO4619
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 7.4A (V
GS
=10V) -5.2A (V
GS
= -10V)
R
DS(ON)
R
DS(ON)
< 24m
(V
GS
=10V) < 48m
(V
GS
= -10V)
< 36m
(V
GS
=4.5V) < 74m
(V
GS
= -4.5V)
General Description
The AO4619 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used in
inverter and other applications.
Standard
Product AO4619 is Pb-free (meets ROHS
& Sony 259 specifications).
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G1
D1
S1
n-channel
p-channel
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相关PDF资料 |
PDF描述 |
|---|---|
| AO4620 | Complementary Enhancement Mode Field Effect Transistor |
| AO4621 | Complementary Enhancement Mode Field Effect Transistor |
| AO4622 | Complementary Enhancement Mode Field Effect Transistor |
| AO4624 | Complementary Enhancement Mode Field Effect Transistor |
| AO4625 | Complementary Enhancement Mode Field Effect Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4619L | 制造商:AOS 功能描述:MOSFET |
| AO4620 | 功能描述:MOSFET N/P-CH COMPL 30V 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| AO4620_12 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4621 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4622 | 功能描述:MOSFET N/P-CH COMPL 20V 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
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