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参数资料
| 型号： | AO4619 |
| 厂商： | ALPHA |
| 英文描述： | Diode; Antenna switching; VR (V): 60; IF (mA): 50; Pd (mW): 150; rf (ohm) max: 1.8; Condition IF at rf (mA): 10; Condition f at rf (MHz): 100; VF (V) max: 0.9; Condition IF at VF (mA): 2; C (pF) max: 0.45; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: SFP |
| 中文描述： | 增强模式互补场效应晶体管 |
| 文件页数： | 4/7页 |
| 文件大小： | 155K |
| 代理商： | AO4619 |
AO4619
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONE0.1
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICSingle Pulse
0
2
4
6
8
10
0
2
4
6
8
10
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
G
0
200
400
600
800
1000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
C
iss
0
0.0001
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)
P
0.01
0.00001
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
C
oss
C
rss
V
DS
=15V
I
D
=7.4A
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=110°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
(Volts)
-
D
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
100
μ
s
10ms
100m
1s
1ms
D
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
10
μ
s
10s
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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|---|---|
| AO4619L | 制造商:AOS 功能描述:MOSFET |
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