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参数资料
| 型号： | AO4615 |
| 厂商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增强模式互补场效应晶体管 |
| 文件页数： | 5/7页 |
| 文件大小： | 198K |
| 代理商： | AO4615 |
AO4615
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-30
V
-1
-5
1
5
-3
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
μ
A
-1
30
-2
V
A
32
46
48
13
39
56
62
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
S
V
A
-0.77
-1
3
C
iss
C
oss
C
rss
R
g
R
oc
SWITCHING PARAMETERS
Total Gate Charge (10V)
1035
161
99
4.5
0.7
1250
pF
pF
pF
Μ
10
1
0.5
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
18
8.9
3.8
4.1
8
6
19.5
5.9
20.2
13.5
24
12
nC
nC
nC
nC
ns
ns
ns
ns
11
12
26
12
27
18
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
P-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-24V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
μ
A
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
=±5V
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-5.7A
m
V
GS
=-4.5V, I
D
=-4A
V
DS
=-5V, I
D
=-5.7A
I
S
=-1A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Open-circuit protection resistance
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=5V
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-15V, I
D
=-5.7A
V
GS
=-10V, V
DS
=-15V, R
L
=2.6
,
R
GEN
=3
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-5.7A, dI/dt=100A/
μ
s
I
F
=-5.7A, dI/dt=100A/
μ
s
θ
JA
2
A
θ
JA
θ
JL
μ
s pulses, duty cycle 0.5% max.
curve provides a single pulse rating.
provides a single pulse rating.
F. Rev 0: July 2005
≤
2
FR-4 boars pulses, duty cycle 0.5% max.
A
=25°C. The SOA
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
valu in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s the 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
θ
JL
and R
θ
JC
are equivalent terms referring to
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
E. These tests are performed with the device mounted on 1 in
Alpha & Omega Semiconductor, Ltd.
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