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参数资料
| 型号： | AO4620 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN, SOIC-8 |
| 文件页数： | 1/7页 |
| 文件大小： | 188K |
| 代理商： | AO4620 |
Symbol
Max p-channel
Units
VDS
V
VGS
V
IDM
IAR
A
EAR
mJ
TJ, TSTG
°C
Symbol
Device
Typ
Max
Units
n-ch
50
62.5
°C/W
n-ch
80
100
°C/W
RθJL
n-ch
32
40
°C/W
p-ch
50
62.5
°C/W
p-ch
80
100
°C/W
RθJL
p-ch
32
40
°C/W
Junction and Storage Temperature Range
-55 to 150
TA=70°C
Power Dissipation
F
TA=25°C
PD
Avalanche Current
B
13
17
1.44
A
Continuous Drain
Current
F
TA=25°C
ID
TA=70°C
Pulsed Drain Current
B
-30
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Max n-channel
W
7.2
6.2
30
2
1.44
Steady-State
30
-30
±20
Drain-Source Voltage
±20
Gate-Source Voltage
-4.5
-5.3
2
t ≤ 10s
RθJA
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Repetitive avalanche energy 0.3mH
B
25
43
Maximum Junction-to-Lead
C
Steady-State
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
A
AO4620
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel
p-channel
V
DS (V) = 30V
-30V
I
D = 7.2A (VGS=10V)
-5.3A (V
GS = -10V)
R
DS(ON)
R
DS(ON)
< 24m
(V
GS=10V)
< 38m
(V
GS = -10V)
< 36m
(V
GS=4.5V)
< 60m
(V
GS = -4.5V)
100% UIS tested
100% Rg tested
General Description
The AO4620 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON) and low gate
charge. The complementary MOSFETs may be used
in inverter and other applications.
G1
D1
S1
n-channel
p-channel
G2
D2
S2
G1
S1
G2
S2
D1
D2
2
4
5
1
3
8
6
7
Top View
SOIC-8
Top View
Bottom View
Pin1
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相关PDF资料 |
PDF描述 |
|---|---|
| AO4710 | 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AO4800B | 6900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AO4812 | 6000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AO4813 | 7100 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AO4822 | 8000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4620_12 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4621 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4622 | 功能描述:MOSFET N/P-CH COMPL 20V 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| AO4622_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:20V Dual P N-Channel MOSFET |
| AO4624 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
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