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参数资料
| 型号： | AO4800A |
| 厂商： | ALPHA |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 双N沟道增强型场效应晶体管 |
| 文件页数： | 4/4页 |
| 文件大小： | 114K |
| 代理商： | AO4800A |
AO4800A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
THIS PRO0.1
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT T
FUNCTIONS AND RELIABILITY WITSingle Pulse
0.01
0.00001
0.0001
0.001
0.01
0
1
2
3
4
5
0
2
4
6
8
10
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
G
0
200
400
600
800
1000
1200
1400
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
C
iss
0
0.0001 0.001
10
20
30
40
50
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
1
10
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
μ
s
10ms
1ms
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
V
DS
=15V
I
D
=6.9A
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=62.5°C/W
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
Alpha & Omega Semiconductor, Ltd.
相关PDF资料 |
PDF描述 |
|---|---|
| AO4800AL | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4800B | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4800BL | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4801A | Dual P-Channel Enhancement Mode Field Effect Transistor |
| AO4801 | Dual P-Channel Enhancement Mode Field Effect Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4800AL | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4800B | 功能描述:MOSFET DUAL N-CH 30V 6.9A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| AO4800B_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V Dual N-Channel MOSFET |
| AO4800BL | 制造商:AOS 功能描述:MOSFET |
| AO4800C | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V Dual N-Channel MOSFET |
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