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参数资料
| 型号： | AO4800BL |
| 厂商： | ALPHA |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 双N沟道增强型场效应晶体管 |
| 文件页数： | 3/4页 |
| 文件大小： | 118K |
| 代理商： | AO4800BL |
AO4800B/L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
THR
COMPO30
OUT OF 20
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
10
0
2
4
6
8
10
0
10
20
30
40
50
60
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
V
GS
=2V
2.5V
3V
4.5V
10V
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(
10
20
30
40
50
60
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
)
1.0E-06
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
25°C
125°C
0.5
0.7
0.9
1.1
1.3
1.5
1.7
-50
-25
0
25
50
75
100 125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
N
V
GS
=2.5V
V
GS
=10V
V
GS
=4.5V
V
GS
=4.5
V
GS
=10V
V
GS
=2.5V
50
60
70
80
90
100
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
D
)
25°C
125°C
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
I
D
=6.9A
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4800C | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V Dual N-Channel MOSFET |
| AO4800L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Plastic Encapsulated Device |
| AO4801 | 制造商:AOS 功能描述:MOSFET |
| AO4801_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4801A | 功能描述:MOSFET 2P-CH 30V 5A 8SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
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