参数资料
型号: AO4800BL
厂商: ALPHA
英文描述: Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述: 双N沟道增强型场效应晶体管
文件页数: 4/4页
文件大小: 118K
代理商: AO4800BL
AO4800B/L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
THIS PRO0.1
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT T
FUNCTIONS AND RELIABILITY WITSingle Pulse
0.01
0.00001
0.0001
0.001
0.01
0
1
2
3
4
5
0
2
4
6
8
10
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
G
0
200
400
600
800
1000
1200
1400
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
C
iss
0
0.0001 0.001
10
20
30
40
50
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
1
10
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
μ
s
10ms
1ms
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
V
DS
=15V
I
D
=6.9A
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=62.5°C/W
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相关PDF资料
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AO4801A Dual P-Channel Enhancement Mode Field Effect Transistor
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AO4802 Dual N-Channel Enhancement Mode Field Effect Transistor
AO4802L Dual N-Channel Enhancement Mode Field Effect Transistor
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