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参数资料
| 型号： | AO4805 |
| 厂商： | ALPHA |
| 英文描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 双P沟道增强型场效应晶体管 |
| 文件页数： | 2/6页 |
| 文件大小： | 317K |
| 代理商： | AO4805 |
AO4805
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-30
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-3
nA
V
A
-1.7
40
-2.5
16
20.5
15
33
21
-0.75
19
25
18
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
16
S
V
A
-1
-2.6
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
2076
503
302
2
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
39
8
11.4
12.7
7
25.2
12
32
26
nC
nC
nC
ns
ns
ns
ns
ns
nC
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-8A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
=-4.5V, I
D
=-5A
V
DS
=-5V, I
D
=-8A
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-8A
Reverse Transfer Capacitance
Gate resistance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
μ
A
V
DS
=0V, V
GS
=±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
m
V
GS
=-20V, I
D
=-8A
I
S
=-1A,V
GS
=0V
I
F
=-8A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=-10V, V
DS
=-15V, I
D
=-8A
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-15V, R
L
=1.8
,
R
GEN
=3
V
GS
=0V, V
DS
=0V, f=1MHz
Input Capacitance
Output Capacitance
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
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相关代理商/技术参数 |
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| AO4805_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V Dual P-Channel MOSFET |
| AO4805L_101 | 功能描述:MOSFET 2P-CH 30V 9A 8-SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包装:带卷（TR） 零件状态:过期 FET 类型:2 个 P 沟道（双） FET 功能:逻辑电平门 漏源极电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:9A 不同?Id，Vgs 时的?Rds On（最大值）:19 毫欧 @ 8A，10V 不同 Id 时的 Vgs（th）（最大值）:2.8V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:39nC @ 10V 不同 Vds 时的输入电容（Ciss）:2600pF @ 15V 功率 - 最大值:2W 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商器件封装:8-SO 标准包装:1 |
| AO4806 | 功能描述:MOSFET DUAL N-CH 20V 9.4A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| AO4806_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:20V Dual N-Channel MOSFET |
| AO4806L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
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