参数资料
型号: AO6402AL
厂商: ALPHA AND OMEGA SEMICONDUCTOR
元件分类: JFETs
英文描述: 30 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
文件页数: 1/5页
文件大小: 279K
代理商: AO6402AL
Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol
Typ
Max
48
62.5
74
110
RθJL
35
40
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t ≤ 10s
RθJA
°C/W
Absolute Maximum Ratings T A=25°C unless otherwise noted
V
±20
Pulsed Drain Current
B
Power Dissipation
TA=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
7.0
5.6
30
ID
Continuous Drain
Current
A,F
Maximum
Units
Parameter
TA=25°C
TA=70°C
30
W
Junction and Storage Temperature Range
A
PD
°C
2.0
1.28
-55 to 150
TA=70°C
AO6402A
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 30V
ID = 7A
(V GS = 10V)
RDS(ON) < 27m
(VGS = 10V)
RDS(ON) < 40m
(VGS = 4.5V)
General Description
The AO6402A/L uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.
AO6402A and AO6402AL are electrically identical.
-RoHS Compliant
-AO6402AL is Halogen Free
G
D
S
G
D
S
D
1
2
3
6
5
4
Top View
TSOP-6
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相关代理商/技术参数
参数描述
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