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参数资料
| 型号： | AOD452 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 55 A, 25 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | GREEN, DPAK-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 132K |
| 代理商： | AOD452 |
AOD452
Symbol
Min
Typ
Max
Units
BVDSS
25
V
1
TJ=55°C
5
IGSS
100
nA
VGS(th)
1.2
1.8
3
V
ID(ON)
100
A
6.5
8.5
TJ=125°C
9.7
12
11.5
14
m
gFS
35
S
VSD
0.72
1
V
IS
55
A
Ciss
1230
1476
pF
Coss
315
400
pF
Crss
190
280
pF
Rg
1.2
2
Qg(10V)
26.4
32
nC
Qg(4.5V)
13.5
17
nC
Qgs
3.9
5
nC
Qgs(Vth)
1.3
2
nC
Qgd
7.8
10
nC
tD(on)
6.5
8
ns
tr
10
20
ns
tD(off)
22.7
30
ns
tf
6.2
12
ns
trr
23.1
28
ns
Qrr
15.3
18
nC
40
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=12.5V, RL=0.6,
RGEN=3
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
VGS=10V, VDS=12.5V, ID=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Gate Source Charge at Vth
m
IS=1A, VGS=0V
VDS=5V, ID=10A
VGS=4.5V, ID=20A
Forward Transconductance
Diode Forward Voltage
RDS(ON)
Static Drain-Source On-Resistance
IDSS
A
Gate Threshold Voltage
VDS=VGS, ID=250A
VDS=20V, VGS=0V
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
ID=250uA, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=30A
Reverse Transfer Capacitance
IF=20A, dI/dt=100A/s
VGS=0V, VDS=12.5V, f=1MHz
SWITCHING PARAMETERS
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 7 : Feb 2010
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相关代理商/技术参数 |
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| AOD452A | 制造商:Alpha & Omega Semiconductor 功能描述:Trans MOSFET N-CH 25V 55A 3-Pin(2+Tab) TO-252 T/R |
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| AOD452AL_008 | 功能描述:MOSFET N-CH 25V 55A TO252 制造商:alpha & omega semiconductor inc. 系列:SDMOS?? 包装:散装 零件状态:过期 FET 类型:MOSFET N 通道，金属氧化物 FET 功能:标准 漏源极电压（Vdss）:25V 电流 - 连续漏极（Id）（25°C 时）:55A（Tc） 不同?Id，Vgs 时的?Rds On（最大值）:8 毫欧 @ 30A，10V 不同 Id 时的 Vgs（th）（最大值）:3V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:26nC @ 10V 不同 Vds 时的输入电容（Ciss）:1450pF @ 12.5V 功率 - 最大值:2.5W 工作温度:-55°C ~ 175°C（TJ） 安装类型:表面贴装 封装/外壳:TO-252-3，DPak（2 引线+接片），SC-63 供应商器件封装:TO-252 标准包装:1 |
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