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参数资料
| 型号： | AOD480 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 25 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | GREEN, DPAK-3 |
| 文件页数： | 3/6页 |
| 文件大小： | 123K |
| 代理商： | AOD480 |
AOD480
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
5
10
15
20
25
30
0
1
2
3
4
5
VDS (Volts)
Fig 1: On-Region Characteristics
I D
(A
)
VGS=3V
3.5V
4V
4.5V
10V
0
4
8
12
16
20
1.5
2
2.5
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics
I D
(A
)
15
20
25
30
35
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
S
(O
N
)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
I S
(A
)
25°C
125°C
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
rm
a
li
z
e
d
O
n
-R
e
s
is
ta
n
c
e
VGS=10V
VGS=4.5V
10
20
30
40
50
60
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
S
(O
N
)
(m
)
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
ID=20A
25°C
125°C
5V
6V
ID=20A
ID=8A
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AOD480_12 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AOD482 | 功能描述:MOSFET N-CH 100V 32A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AOD484 | 功能描述:MOSFET N-CH 30V 25A TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AOD484_09 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AOD486A | 功能描述:MOSFET N-CH 40V 50A TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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