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参数资料
| 型号： | AON6704 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 85 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 6 X 5 MM, GREEN, DFN-8 |
| 文件页数： | 1/7页 |
| 文件大小： | 266K |
| 代理商： | AON6704 |
AON6704
30V N-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS=10V)
85A
RDS(ON) (at VGS=10V)
< 2.5m
RDS(ON) (at VGS = 4.5V)
< 3.4m
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
RθJC
Maximum Junction-to-Case
°C/W
Maximum Junction-to-Ambient
A D
1.1
50
1.5
Power Dissipation
B
PD
W
Power Dissipation
A
PDSM
W
TA=70°C
83
1.6
TA=25°C
A
TA=25°C
IDSM
A
TA=70°C
ID
85
66
TC=25°C
TC=100°C
Avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
19
Continuous Drain
Current
125
24
A
50
SRFET
TM AON6704 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
30V
V
±20
Gate-Source Voltage
Drain-Source Voltage
30
Units
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Maximum Junction-to-Ambient
A
°C/W
RθJA
15
42
20
250
Pulsed Drain Current
C
Continuous Drain
Current
G
Parameter
Typ
Max
TC=25°C
2.5
33
TC=100°C
SRFET TM
G
D
S
SRFET
TM
Soft Recovery MOSFET:
Integrated Schottky Diode
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View
Bottom View
Rev 3 : March 2011
www.aosmd.com
Page 1 of 7
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相关代理商/技术参数 |
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| AON6718L_101 | 功能描述:MOSFET N-CH 30V 18A 8DFN 制造商:alpha & omega semiconductor inc. 系列:SRFET?? 包装:散装 零件状态:过期 FET 类型:MOSFET N 通道，肖特基，金属氧化物! FET 功能:标准 漏源极电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:18A（Ta），80A（Tc） 不同?Id，Vgs 时的?Rds On（最大值）:3.7 毫欧 @ 20A，10V 不同 Id 时的 Vgs（th）（最大值）:2.2V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:72nC @ 10V 不同 Vds 时的输入电容（Ciss）:4463pF @ 15V 功率 - 最大值:2.1W 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:8-DFN 供应商器件封装:8-DFN（5x6） 标准包装:1 |
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