- 您现在的位置：买卖IC网 > PDF目录51257 > AP05N50P (ADVANCED POWER ELECTRONICS CORP) 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF资料下载
参数资料
| 型号： | AP05N50P |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 153K |
| 代理商： | AP05N50P |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
500
-
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=2.7A
-
1.4
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2.7A
-
2.4
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=500V, VGS=0V
-
25
uA
Drain-Source Leakage Current (Tj=125
oC)
VDS=400V, VGS=0V
-
250
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
3
ID=3.1A
-
19
30
nC
Qgs
Gate-Source Charge
VDS=400V
-
4.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
6.3
-
nC
td(on)
Turn-on Delay Time
3
VDD=250V
-
11
-
ns
tr
Rise Time
ID=3.1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=12Ω,VGS=10V
-
32
-
ns
tf
Fall Time
RD=80.6Ω
-10
-
ns
Ciss
Input Capacitance
VGS=0V
-
985
1580
pF
Coss
Output Capacitance
VDS=25V
-
85
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
3.3
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.5
3.8
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
3
Tj=25℃, IS=4.5A, VGS=0V
-
1.5
V
trr
Reverse Recovery Time
3
IS=3.1A, VGS=0V,
-
300
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
2.6
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25
oC , V
DD=50V , L=10mH , RG=25Ω , IAS=3A.
3.Pulse test
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
AP05N50P
相关PDF资料 |
PDF描述 |
|---|---|
| AP0803GMT-HF | 19 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP0903GH-HF | 51 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP09N20J-HF | 8.6 A, 200 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP09N20H-HF | 8.6 A, 200 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP09N50I | 9 A, 500 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP05N50S-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP05YC104KQB2A | 功能描述:多层陶瓷电容器MLCC - SMD/SMT 16volts 0.01uF 10% X7R RoHS:否 制造商:Johanson Dielectrics 电容:2.2 uF 容差:10 % 电压额定值:10 V 温度系数/代码: 外壳代码 - in:0603 外壳代码 - mm:1608 工作温度范围:- 55 C to + 85 C 产品: 封装:Reel |
| AP05YC105KQB2A | 功能描述:多层陶瓷电容器MLCC - SMD/SMT 16volts 1uF 10% X7R RoHS:否 制造商:Johanson Dielectrics 电容:2.2 uF 容差:10 % 电压额定值:10 V 温度系数/代码: 外壳代码 - in:0603 外壳代码 - mm:1608 工作温度范围:- 55 C to + 85 C 产品: 封装:Reel |
| AP05ZC104KQB2A | 功能描述:多层陶瓷电容器MLCC - SMD/SMT 10volts 0.01uF 10% X7R RoHS:否 制造商:Johanson Dielectrics 电容:2.2 uF 容差:10 % 电压额定值:10 V 温度系数/代码: 外壳代码 - in:0603 外壳代码 - mm:1608 工作温度范围:- 55 C to + 85 C 产品: 封装:Reel |
| AP05ZC105KQB2A | 功能描述:多层陶瓷电容器MLCC - SMD/SMT 10volts 1uF 10% X7R RoHS:否 制造商:Johanson Dielectrics 电容:2.2 uF 容差:10 % 电压额定值:10 V 温度系数/代码: 外壳代码 - in:0603 外壳代码 - mm:1608 工作温度范围:- 55 C to + 85 C 产品: 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。