参数资料
型号: AP05N50P
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: ROHS COMPLIANT, TO-220, 3 PIN
文件页数: 3/3页
文件大小: 153K
代理商: AP05N50P
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
AP05N50P
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
0
1
2
3
4
5
02
46
8
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
7.0V
6.0V
5.0V
V G =4.0V
0
1
2
3
-50
0
50
100
150
T j , Junction Temperature (
o C )
N
o
rmalize
d
R
DS(ON)
I D =2.7A
V G =10V
0
1
2
3
4
5
0
4
8
12
16
20
24
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
10V
7 .0V
6 .0V
5.0 V
V G = 4.0V
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A)
T j = 150
o CT
j = 25
o C
0
0.5
1
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
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相关代理商/技术参数
参数描述
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