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参数资料
| 型号： | AP09N20BGP-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 7.8 A, 200 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 58K |
| 代理商： | AP09N20BGP-HF |
AP09N20BGP-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS
QGD
QG
Charge
0
200
400
600
800
1000
1
5
9
13
17212529
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0
2
4
6
8
10
0
1020
304050
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =5A
V DS =160V
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
1
10
100
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
Operation in this area
limited by RDS(ON)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP09N20BGS-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement Lower Gate Charge |
| AP09N20H | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP09N20H,J-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP09N20H-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP09N20J | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
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