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参数资料
| 型号： | AP10N70W |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 222K |
| 代理商： | AP10N70W |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ 100% Avalanche Test
BVDSS
600V
▼ Fast Switching Characteristic
RDS(ON)
0.6Ω
▼ Simple Drive Requirement
ID
10A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
1
A
PD@TC=25℃
Total Power Dissipation
W
W/℃
EAS
Single Pulse Avalanche Energy
2
mJ
IAR
Avalanche Current
A
TSTG
℃
TJ
Operating Junction Temperature Range
℃
Thermal Data
Symbol
Value
Unit
Rthj-c
Maximum
Thermal Resistance, Junction-case
0.72
℃
/W
Rthj-a
Maximum
Thermal Resistance, Junction-ambient
40
℃
/W
Data & specifications subject to change without notice
10
40
174
10
6.3
50
1.39
-55 to 150
Parameter
AP10N70W
± 30
Rating
600
RoHS-compliant Product
201022072-1/4
Storage Temperature Range
-55 to 150
Parameter
Linear Derating Factor
The TO-3P package is widely preferred for commercial-industrial applications.
The device is suited for switch mode power supplies ,DC-AC converters
and high current high speed switching circuits.
G
D
S
AP10N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. The TO-3P type
provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast
switching,
ruggedized design and cost-effectiveness.
G
D
S
TO-3P
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