参数资料
型号: AP09N50I
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 9 A, 500 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: ROHS COMPLIANT, TO-220CFM, 3 PIN
文件页数: 4/5页
文件大小: 115K
代理商: AP09N50I
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP09N50I
0.01
0.1
1
10
100
1000
1
10
100
1000
V DS ,Drain-to-Source Voltage (V)
I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
2
4
6
8
10
12
0
1020
3040
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =6A
V DS =400V
1
10
100
1000
10000
1
5
9
131721
2529
V DS ,Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
Q
VG
10V
QGS
QGD
QG
Charge
td(on) tr
td(off) tf
VDS
VGS
10%
90%
相关PDF资料
PDF描述
AP09N70I-H-HF 8.3 A, 700 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP10N70I-A 10 A, 650 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP10N70R-A 10 A, 650 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AP10N70S 10 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AP11N50I 11 A, 500 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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