参数资料
型号: AP09N50P-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 9 A, 500 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN
文件页数: 2/4页
文件大小: 95K
代理商: AP09N50P-HF
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
500
-
V
RDS(ON)
Static Drain-Source On-Resistance
3
VGS=10V, ID=4.5A
-
0.75
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
5.1
-
S
IDSS
Drain-Source Leakage Current
VDS=400V, VGS=0V
-
100
uA
IGSS
Gate-Source Leakage
VGS=+30V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
3
ID=6A
-
32
51
nC
Qgs
Gate-Source Charge
VDS=400V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
14
-
nC
td(on)
Turn-on Delay Time
3
VDD=250V
-
35
-
ns
tr
Rise Time
ID=6A
-
45
-
ns
td(off)
Turn-off Delay Time
RG=50Ω,VGS=10V
-
164
-
ns
tf
Fall Time
RD=42Ω
-48
-
ns
Ciss
Input Capacitance
VGS=0V
-
1370 2200
pF
Coss
Output Capacitance
VDS=25V
-
125
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
7
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VSD
Forward On Voltage
3
IS=4.5A, VGS=0V
-
1.5
V
trr
Reverse Recovery Time
3
IS=6A, VGS=0V
-
340
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
4.4
-
uC
Notes:
1.Pulse width limited by Max junction temperature.
2.Starting Tj=25
oC , V
DD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP09N50P-HF
相关PDF资料
PDF描述
AP1001BSQ 15 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
AP10N70P 10 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP10N70W 10 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
AP1203GH 37 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP124-93 1700 MHz - 1900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
相关代理商/技术参数
参数描述
AP09N70I-A 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP09N70I-A_09 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP09N70I-A-HF 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP09N70I-H-HF 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP09N70P 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE