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参数资料
| 型号： | AP1001BSQ |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN AND LEAD FREE, GREENFET PACKAGE-2 |
| 文件页数： | 3/4页 |
| 文件大小： | 106K |
| 代理商： | AP1001BSQ |
AP1001BSQ
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
20
40
60
0.0
1.0
2.0
3.0
4.0
5.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
10V
7.0V
6.0V
5.0V
V G =4.0V
0
20
40
60
80
100
120
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
10V
7.0V
6.0V
5.0V
V G =4.0V
0.4
0.8
1.2
1.6
2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =15A
V G =10V
0
4
8
12
16
0
0.5
1
1.5
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
4
5
6
7
8
9
2468
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =12A
T A =25
o C
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j ,Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
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