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参数资料
| 型号： | AP10N70S |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | ROHS COMPLIANT, TO-263, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 0K |
| 代理商： | AP10N70S |
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
AP10N70S
0.8
0.9
1
1.1
1.2
1.3
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
0
4
8
12
16
20
0
5
10
15
20
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
6.0V
5.0V
4.5V
V G =4.0V
0.8
1.2
1.6
2
2.4
2.8
3.2
25
50
75
100
125
150
T j , Junction Temperature (
o C )
N
o
rmalize
d
R
DS(ON)
I D =5A
V G =10V
0
4
8
12
16
0
10
203040
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
10V
6.0V
5.0V
4.5V
V G = 4.0V
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A)
T j = 150
o CT
j = 25
o C
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
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相关代理商/技术参数 |
参数描述 |
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| AP10N70W | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP10P332 | 功能描述:通用继电器 RELAY VACUUM SPST RoHS:否 制造商:Omron Electronics 触点形式:1 Form A (SPST-NO) 触点电流额定值:150 A 线圈电压:24 VDC 线圈电阻:144 Ohms 线圈电流:167 mA 切换电压:400 V 安装风格:Chassis 触点材料: |
| AP10P334 | 功能描述:通用继电器 RELAY VACUUM SPST L RoHS:否 制造商:Omron Electronics 触点形式:1 Form A (SPST-NO) 触点电流额定值:150 A 线圈电压:24 VDC 线圈电阻:144 Ohms 线圈电流:167 mA 切换电压:400 V 安装风格:Chassis 触点材料: |
| AP10P532 | 功能描述:通用继电器 RELAY VACUUM SPST RoHS:否 制造商:Omron Electronics 触点形式:1 Form A (SPST-NO) 触点电流额定值:150 A 线圈电压:24 VDC 线圈电阻:144 Ohms 线圈电流:167 mA 切换电压:400 V 安装风格:Chassis 触点材料: |
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