参数资料
型号: AP22T03GH-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 15.6 A, 30 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封装: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件页数: 4/4页
文件大小: 94K
代理商: AP22T03GH-HF
AP22T03GH-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
0
1
10
100
0.1
1
10
100
V DS ,Drain-to-Source Voltage (V)
I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
2
4
6
8
10
02
46
8
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =8A
V DS =24V
0
100
200
300
400
500
1
5
9
13
1721
2529
V DS ,Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
Q
VG
4.5V
QGS
QGD
QG
Charge
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Operation in this area
limited by RDS(ON)
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