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参数资料
| 型号： | AP2301BGN-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 2.8 A, 20 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 93K |
| 代理商： | AP2301BGN-HF |
AP2301BGN-HF
65mΩ
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
0
2
4
6
8
02
46
8
10
12
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D = -2A
V DS = -16V
0.01
0.1
1
10
100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T A =25
o C
Single Pulse
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
t
T
Rthja = 270℃/W
0
200
400
600
800
1
5
9
1317
2125
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
Q
VG
QGS
QGD
QG
Charge
-4.5V
td(on) tr
td(off) tf
VDS
VGS
10%
90%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP2301D | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:1.5A DDR TERMINATION REGULATOR |
| AP2301D-E1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:1.5A DDR TERMINATION REGULATOR |
| AP2301DTR | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:1.5A DDR TERMINATION REGULATOR |
| AP2301DTR-E1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:1.5A DDR TERMINATION REGULATOR |
| AP2301FGEG-7 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH |
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