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参数资料
| 型号： | AP2332GN-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 27 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 91K |
| 代理商： | AP2332GN-HF |
AP2332GN-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =16mA
V G =10V
0.1
0.2
0.3
0.4
0.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
0
10
20
30
40
0.0
2.0
4.0
6.0
8.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(m
A
)
T A =25
o C
10V
9.0V
8.0V
7.0V
V G = 6.0V
0
10
20
30
0.0
2.0
4.0
6.0
8.0
10.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A = 150
o C
10V
9.0V
8.0V
7.0V
V G = 6.0V
0.8
0.9
1
1.1
1.2
1.3
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
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相关代理商/技术参数 |
参数描述 |
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