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参数资料
| 型号： | AP25T03GJ |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 70K |
| 代理商： | AP25T03GJ |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼
▼ Lower Gate Charge
BVDSS
30V
▼
▼ Simple Drive Requirement
RDS(ON)
35mΩ
▼
▼ Fast Switching Characteristic
ID
20A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
6
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data & specifications subject to change without notice
200803053-1/4
Thermal Data
Parameter
Pulsed Drain Current
1
45
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.16
Storage Temperature Range
Total Power Dissipation
20.8
-55 to 150
Continuous Drain Current
20
Continuous Drain Current
12
Drain-Source Voltage
30
Gate-Source Voltage
±20
AP25T03GH/J
Parameter
Rating
Pb Free Plating Product
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP25T03GJ) is available for low-profile applications.
G
D
S
TO-251(J)
G D
S
TO-252(H)
G
D
S
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